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S29GL01GS12TFIV10
Parallel NOR Flash Memory, 1024 Mbit Density, 120 ns Initial Access Time, TSOP-56, RoHS
The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory applications, featuring a 1024 Mbit density and a rapid initial access time of 120 ns. Designed for surface mount technology, this memory component is housed in a compact TSOP-56 package, making it ideal for space-constrained designs. With a wide operating temperature range from -40°C to 85°C and compliance with RoHS standards, this memory is suitable for a variety of industrial and commercial applications, e
Full Specifications
About This Product
The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory applications, featuring a 1024 Mbit density and a rapid initial access time of 120 ns. Designed for surface mount technology, this memory component is housed in a compact TSOP-56 package, making it ideal for space-constrained designs. With a wide operating temperature range from -40°C to 85°C and compliance with RoHS standards, this memory is suitable for a variety of industrial and commercial applications, ensuring reliability and performance in demanding environments.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Key Features
- Case/Package: TFSOP
- Number of Pins: 56
- Interface: Parallel
- Mount: Surface Mount
- Lifecycle Status: Production
Typical Use Cases
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S29GL01GS12TFIV10
Infineon
The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory applications, featuring a 1024 Mbit density and a rapid initial access time of 120 ns. Designed for surface mount technology, this memory component is housed in a compact TSOP-56 package, making it ideal for space-constrained designs. With a wide operating temperature range from -40°C to 85°C and compliance with RoHS standards, this memory is suitable for a variety of industrial and commercial applications, e
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