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Integrated Circuits (ICs)

S29GL512S10TFI010

Parallel NOR Flash Memory, 512 Mbit Density, 100 ns Initial Access Time, TSOP-56, RoHS

The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory applications with a density of 512 Mbit and an initial access time of 15 ns. Designed for reliability and performance, this memory device is housed in a compact TSOP-56 package, making it suitable for surface mount applications. With a wide operating temperature range from -40°C to 85°C, it is ideal for various industrial and commercial uses, ensuring data integrity and fast access times.

BrandInfineon
PackageTSOP
Device TypeNOR
MountingSurface Mount

Full Specifications

Number of Pins56
Density512Mb
Access Time15ns
InterfaceParallel
Min Supply Voltage2.7V
Max Supply Voltage3.6V
Lifecycle StatusProduction
Contact PlatingTin
MountSurface Mount
Address Bus Width25b
Ambient Temperature Range High85°C
Data Bus Width16b
Max Operating Temperature85°C
Memory Size64MB

About This Product

The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory applications with a density of 512 Mbit and an initial access time of 15 ns. Designed for reliability and performance, this memory device is housed in a compact TSOP-56 package, making it suitable for surface mount applications. With a wide operating temperature range from -40°C to 85°C, it is ideal for various industrial and commercial uses, ensuring data integrity and fast access times.

What is this product used for?

Suitable for design, repair, and production programs using NOR devices.

Typical Use Cases

Memory Components NOR TSOP NOR

Sourcing Support for This MPN

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  • Approved-alternate and cross-reference review when the requested line is constrained
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RFQ Checklist

Part number Confirm the target MPN or suggest approved alternates
Target Quantity Sample, pilot run, or mass production volume
Project stage Prototype, NPI, or ongoing production
Target price Budget or target price range if available
Parallel NOR Flash Memory, 512 Mbit Density, 100 ns Initial Access Time, TSOP-56, RoHS

S29GL512S10TFI010

Infineon

The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory applications with a density of 512 Mbit and an initial access time of 15 ns. Designed for reliability and performance, this memory device is housed in a compact TSOP-56 package, making it suitable for surface mount applications. With a wide operating temperature range from -40°C to 85°C, it is ideal for various industrial and commercial uses, ensuring data integrity and fast access times.

  • Competitive pricing from verified sources
  • Sample to production quantities
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