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S29GL512T11FHIV23
Parallel NOR Flash Memory, 512 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
The Infineon Parallel NOR Flash Memory offers a robust solution for high-performance applications requiring reliable data storage and quick access times. With a density of 512 Mbit and an impressive initial access time of just 110 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format and compliant with RoHS standards, it ensures both efficiency and environmental responsibility. This product is currently in production, making
Full Specifications
About This Product
The Infineon Parallel NOR Flash Memory offers a robust solution for high-performance applications requiring reliable data storage and quick access times. With a density of 512 Mbit and an impressive initial access time of just 110 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format and compliant with RoHS standards, it ensures both efficiency and environmental responsibility. This product is currently in production, making it a dependable choice for your next project.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
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S29GL512T11FHIV23
Infineon
The Infineon Parallel NOR Flash Memory offers a robust solution for high-performance applications requiring reliable data storage and quick access times. With a density of 512 Mbit and an impressive initial access time of just 110 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format and compliant with RoHS standards, it ensures both efficiency and environmental responsibility. This product is currently in production, making
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