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S29GL512T10FAI010
Parallel NOR Flash Memory, 512 Mbit Density, 100 ns Initial Access Time, FBGA-64
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring high-density storage with rapid access times. With a density of 512 Mbit and an initial access time of just 100 ns, this memory component is designed for efficiency and reliability in demanding environments. Housed in a compact FBGA-64 package, it is ideal for a variety of embedded systems and consumer electronics, ensuring optimal performance and longevity in production.
Full Specifications
About This Product
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring high-density storage with rapid access times. With a density of 512 Mbit and an initial access time of just 100 ns, this memory component is designed for efficiency and reliability in demanding environments. Housed in a compact FBGA-64 package, it is ideal for a variety of embedded systems and consumer electronics, ensuring optimal performance and longevity in production.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
Sourcing Support for This MPN
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S29GL512T10FAI010
Infineon
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring high-density storage with rapid access times. With a density of 512 Mbit and an initial access time of just 100 ns, this memory component is designed for efficiency and reliability in demanding environments. Housed in a compact FBGA-64 package, it is ideal for a variety of embedded systems and consumer electronics, ensuring optimal performance and longevity in production.
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