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S29GL512S11TFB010
Parallel NOR Flash Memory, 512 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS
The Infineon 512 Mbit Parallel NOR Flash Memory is a high-performance memory solution designed for applications requiring fast access times and reliable data storage. With an initial access time of just 110 ns, this memory component is ideal for embedded systems and industrial applications. Housed in a compact TSOP-56 package, it operates efficiently across a wide temperature range from -40°C to 105°C, ensuring robust performance in diverse environments. Compliant with RoHS standards, this memor
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About This Product
The Infineon 512 Mbit Parallel NOR Flash Memory is a high-performance memory solution designed for applications requiring fast access times and reliable data storage. With an initial access time of just 110 ns, this memory component is ideal for embedded systems and industrial applications. Housed in a compact TSOP-56 package, it operates efficiently across a wide temperature range from -40°C to 105°C, ensuring robust performance in diverse environments. Compliant with RoHS standards, this memory device is a reliable choice for modern electronic designs.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
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S29GL512S11TFB010
Infineon
The Infineon 512 Mbit Parallel NOR Flash Memory is a high-performance memory solution designed for applications requiring fast access times and reliable data storage. With an initial access time of just 110 ns, this memory component is ideal for embedded systems and industrial applications. Housed in a compact TSOP-56 package, it operates efficiently across a wide temperature range from -40°C to 105°C, ensuring robust performance in diverse environments. Compliant with RoHS standards, this memor
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