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S29GL512S11DHAV23
Parallel NOR Flash Memory, 512 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring high-density storage with fast access times. With a density of 512 Mbit and an initial access time of just 110 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format, it ensures efficient space utilization while maintaining reliable performance across a wide temperature range from -40°C to 85°C. This RoHS-compliant memory is ideal for va
Full Specifications
About This Product
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring high-density storage with fast access times. With a density of 512 Mbit and an initial access time of just 110 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format, it ensures efficient space utilization while maintaining reliable performance across a wide temperature range from -40°C to 85°C. This RoHS-compliant memory is ideal for various applications, including automotive, industrial, and consumer electronics.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
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S29GL512S11DHAV23
Infineon
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring high-density storage with fast access times. With a density of 512 Mbit and an initial access time of just 110 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format, it ensures efficient space utilization while maintaining reliable performance across a wide temperature range from -40°C to 85°C. This RoHS-compliant memory is ideal for va
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