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S29GL256S11FHIV23
Parallel NOR Flash Memory, 256 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
The Infineon 256 Mbit Parallel NOR Flash Memory is a high-performance memory solution designed for applications requiring fast access times and reliable data storage. With an initial access time of just 110 ns, this memory component is ideal for a variety of embedded systems and industrial applications. Packaged in a compact FBGA-64 format, it supports a wide operating temperature range from -40°C to 85°C, ensuring optimal performance in diverse environments. This RoHS-compliant memory device is
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About This Product
The Infineon 256 Mbit Parallel NOR Flash Memory is a high-performance memory solution designed for applications requiring fast access times and reliable data storage. With an initial access time of just 110 ns, this memory component is ideal for a variety of embedded systems and industrial applications. Packaged in a compact FBGA-64 format, it supports a wide operating temperature range from -40°C to 85°C, ensuring optimal performance in diverse environments. This RoHS-compliant memory device is currently in production, making it a dependable choice for your next project.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
Sourcing Support for This MPN
- MPN and package verification against your BOM or approved vendor list
- Approved-alternate and cross-reference review when the requested line is constrained
- Availability, lifecycle, and supply-risk discussion for procurement planning
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S29GL256S11FHIV23
Infineon
The Infineon 256 Mbit Parallel NOR Flash Memory is a high-performance memory solution designed for applications requiring fast access times and reliable data storage. With an initial access time of just 110 ns, this memory component is ideal for a variety of embedded systems and industrial applications. Packaged in a compact FBGA-64 format, it supports a wide operating temperature range from -40°C to 85°C, ensuring optimal performance in diverse environments. This RoHS-compliant memory device is
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