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S29GL01GT11FHIV40
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns 64-Pin Fortified BGA Tray
The Infineon NOR Flash Parallel 3V/3.3V 1G-bit memory is designed for high-performance applications requiring reliable data storage and fast access times. With a memory size of 128MB and an access time of just 110ns, this component is ideal for embedded systems and industrial applications. It operates within a temperature range of -40°C to 85°C, ensuring durability in harsh environments. The 64-pin fortified BGA package enhances the robustness of the device, making it a perfect choice for demand
Full Specifications
About This Product
The Infineon NOR Flash Parallel 3V/3.3V 1G-bit memory is designed for high-performance applications requiring reliable data storage and fast access times. With a memory size of 128MB and an access time of just 110ns, this component is ideal for embedded systems and industrial applications. It operates within a temperature range of -40°C to 85°C, ensuring durability in harsh environments. The 64-pin fortified BGA package enhances the robustness of the device, making it a perfect choice for demanding electronic designs.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
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S29GL01GT11FHIV40
Infineon
The Infineon NOR Flash Parallel 3V/3.3V 1G-bit memory is designed for high-performance applications requiring reliable data storage and fast access times. With a memory size of 128MB and an access time of just 110ns, this component is ideal for embedded systems and industrial applications. It operates within a temperature range of -40°C to 85°C, ensuring durability in harsh environments. The 64-pin fortified BGA package enhances the robustness of the device, making it a perfect choice for demand
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