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S29GL01GT11FHIV10
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns 64-Pin Fortified BGA Tray
The Infineon NOR Flash Parallel 3V/3.3V 1G-bit memory solution is designed for high-performance applications requiring reliable data storage and fast access times. With a configuration of 128M x 8 or 64M x 16, this memory chip operates at a swift 110ns access time, making it ideal for a variety of embedded systems and consumer electronics. Housed in a robust 64-pin Fortified BGA tray, this component ensures durability and ease of integration while meeting RoHS compliance standards for environmen
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About This Product
The Infineon NOR Flash Parallel 3V/3.3V 1G-bit memory solution is designed for high-performance applications requiring reliable data storage and fast access times. With a configuration of 128M x 8 or 64M x 16, this memory chip operates at a swift 110ns access time, making it ideal for a variety of embedded systems and consumer electronics. Housed in a robust 64-pin Fortified BGA tray, this component ensures durability and ease of integration while meeting RoHS compliance standards for environmentally friendly manufacturing.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
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S29GL01GT11FHIV10
Infineon
The Infineon NOR Flash Parallel 3V/3.3V 1G-bit memory solution is designed for high-performance applications requiring reliable data storage and fast access times. With a configuration of 128M x 8 or 64M x 16, this memory chip operates at a swift 110ns access time, making it ideal for a variety of embedded systems and consumer electronics. Housed in a robust 64-pin Fortified BGA tray, this component ensures durability and ease of integration while meeting RoHS compliance standards for environmen
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