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S29GL01GS12TFIV20
Parallel NOR Flash Memory, 1024 Mbit Density, 120 ns Initial Access Time, TSOP-56, RoHS
The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory needs, featuring a 1024 Mbit density and an impressive initial access time of just 120 ns. Designed for surface mount applications, this memory component is housed in a compact TSOP-56 package, making it ideal for space-constrained designs. With a wide operating temperature range from -40°C to 85°C, it ensures reliable performance in various environments. This RoHS-compliant memory is perfect for applications
Full Specifications
About This Product
The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory needs, featuring a 1024 Mbit density and an impressive initial access time of just 120 ns. Designed for surface mount applications, this memory component is housed in a compact TSOP-56 package, making it ideal for space-constrained designs. With a wide operating temperature range from -40°C to 85°C, it ensures reliable performance in various environments. This RoHS-compliant memory is perfect for applications requiring fast, asynchronous access and high data integrity.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
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S29GL01GS12TFIV20
Infineon
The Infineon Parallel NOR Flash Memory offers a robust solution for high-density memory needs, featuring a 1024 Mbit density and an impressive initial access time of just 120 ns. Designed for surface mount applications, this memory component is housed in a compact TSOP-56 package, making it ideal for space-constrained designs. With a wide operating temperature range from -40°C to 85°C, it ensures reliable performance in various environments. This RoHS-compliant memory is perfect for applications
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