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S29GL01GS10FHI023
Parallel NOR Flash Memory, 1024 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
The Infineon GL-S Parallel NOR Flash Memory offers a robust solution for high-density memory applications, featuring a remarkable 1024 Mbit density and a swift 100 ns initial access time. Designed for reliability and performance, this memory component is housed in a compact FBGA-64 package, making it an ideal choice for space-constrained designs. With a wide operating temperature range from -40°C to 85°C, this RoHS-compliant memory is suitable for various industrial applications, ensuring consis
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About This Product
The Infineon GL-S Parallel NOR Flash Memory offers a robust solution for high-density memory applications, featuring a remarkable 1024 Mbit density and a swift 100 ns initial access time. Designed for reliability and performance, this memory component is housed in a compact FBGA-64 package, making it an ideal choice for space-constrained designs. With a wide operating temperature range from -40°C to 85°C, this RoHS-compliant memory is suitable for various industrial applications, ensuring consistent performance in demanding environments.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
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S29GL01GS10FHI023
Infineon
The Infineon GL-S Parallel NOR Flash Memory offers a robust solution for high-density memory applications, featuring a remarkable 1024 Mbit density and a swift 100 ns initial access time. Designed for reliability and performance, this memory component is housed in a compact FBGA-64 package, making it an ideal choice for space-constrained designs. With a wide operating temperature range from -40°C to 85°C, this RoHS-compliant memory is suitable for various industrial applications, ensuring consis
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