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S29AL016J70FFI012
Parallel NOR Flash Memory, 16 Mbit Density, 70 ns Initial Access Time, FBGA-64, RoHS
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring reliable and high-speed memory storage. With a density of 16 Mbit and an initial access time of just 70 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format, it is ideal for space-constrained designs while ensuring compliance with RoHS standards. Operating efficiently within a temperature range of -40°C to 85°C, this memory is suitable
Full Specifications
About This Product
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring reliable and high-speed memory storage. With a density of 16 Mbit and an initial access time of just 70 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format, it is ideal for space-constrained designs while ensuring compliance with RoHS standards. Operating efficiently within a temperature range of -40°C to 85°C, this memory is suitable for a variety of industrial and commercial applications.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Typical Use Cases
Sourcing Support for This MPN
- MPN and package verification against your BOM or approved vendor list
- Approved-alternate and cross-reference review when the requested line is constrained
- Availability, lifecycle, and supply-risk discussion for procurement planning
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RFQ Checklist
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S29AL016J70FFI012
Infineon
The Infineon Parallel NOR Flash Memory offers a robust solution for applications requiring reliable and high-speed memory storage. With a density of 16 Mbit and an initial access time of just 70 ns, this memory component is designed to meet the demands of modern electronic systems. Packaged in a compact FBGA-64 format, it is ideal for space-constrained designs while ensuring compliance with RoHS standards. Operating efficiently within a temperature range of -40°C to 85°C, this memory is suitable
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