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MWE6IC9100NBR1
GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 960 MHz, 100 W, 26 V
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications operating at 960 MHz. With a robust output power of 100 W and a gain of 33.5 dB, this amplifier is ideal for enhancing signal strength in various RF communication systems. Packaged in a TO-272 case, it features a compact design with a screw and surface mount capability, making it suitable for diverse installation environments. The amplifier operates efficiently at a supp
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About This Product
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications operating at 960 MHz. With a robust output power of 100 W and a gain of 33.5 dB, this amplifier is ideal for enhancing signal strength in various RF communication systems. Packaged in a TO-272 case, it features a compact design with a screw and surface mount capability, making it suitable for diverse installation environments. The amplifier operates efficiently at a supply voltage of 28 V, ensuring reliable performance even under demanding conditions.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MWE6IC9100NBR1
NXP Semiconductors
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications operating at 960 MHz. With a robust output power of 100 W and a gain of 33.5 dB, this amplifier is ideal for enhancing signal strength in various RF communication systems. Packaged in a TO-272 case, it features a compact design with a screw and surface mount capability, making it suitable for diverse installation environments. The amplifier operates efficiently at a supp
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