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MWE6IC9080NBR1
GSM, GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 865-960 MHz, 80 W CW, 28 V, FM14F
The NXP Semiconductors GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 865-960 MHz frequency range, delivering an impressive output power of 80 W CW at 28 V. This amplifier is ideal for GSM and GSM EDGE systems, providing exceptional gain of 28.8 dB and ensuring reliable operation in demanding environments. Packaged in a compact TO-272 case, it is suitable for various RF applications, making it a versatile choice for engineers and design
Full Specifications
About This Product
The NXP Semiconductors GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 865-960 MHz frequency range, delivering an impressive output power of 80 W CW at 28 V. This amplifier is ideal for GSM and GSM EDGE systems, providing exceptional gain of 28.8 dB and ensuring reliable operation in demanding environments. Packaged in a compact TO-272 case, it is suitable for various RF applications, making it a versatile choice for engineers and designers seeking efficiency and performance.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Case/Package: TO-272
- Number of Pins: 15
- Frequency: 960MHz
- Gain: 28.8dB
- Max Supply Voltage: 32V
- Weight: 1.909199g
Typical Use Cases
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MWE6IC9080NBR1
NXP Semiconductors
The NXP Semiconductors GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 865-960 MHz frequency range, delivering an impressive output power of 80 W CW at 28 V. This amplifier is ideal for GSM and GSM EDGE systems, providing exceptional gain of 28.8 dB and ensuring reliable operation in demanding environments. Packaged in a compact TO-272 case, it is suitable for various RF applications, making it a versatile choice for engineers and design
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