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MW7IC2240NBR1
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 4 W Avg., 28 V
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating within the frequency range of 2110-2170 MHz, this amplifier delivers an impressive average output power of 4 W, making it ideal for W-CDMA systems. Housed in a compact TO-272 package, it ensures efficient thermal management and reliability across a wide temperature range, from -65°C to 225°C. With a gain of 30 dB
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About This Product
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating within the frequency range of 2110-2170 MHz, this amplifier delivers an impressive average output power of 4 W, making it ideal for W-CDMA systems. Housed in a compact TO-272 package, it ensures efficient thermal management and reliability across a wide temperature range, from -65°C to 225°C. With a gain of 30 dB and a P1dB of 46 dBm, this amplifier is engineered to meet the demanding requirements of modern RF applications.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MW7IC2240NBR1
NXP Semiconductors
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating within the frequency range of 2110-2170 MHz, this amplifier delivers an impressive average output power of 4 W, making it ideal for W-CDMA systems. Housed in a compact TO-272 package, it ensures efficient thermal management and reliability across a wide temperature range, from -65°C to 225°C. With a gain of 30 dB
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