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MW7IC2220NBR1
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 2 W Avg., 28 V
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance wireless communication applications, operating within the frequency range of 2110-2170 MHz. With a robust output power of 2 W average and a gain of 31 dB, this amplifier ensures exceptional signal integrity and efficiency. Packaged in a compact TO-272 case, it is ideal for surface mount applications and is capable of withstanding high temperatures up to 225°C, making it a reliable c
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About This Product
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance wireless communication applications, operating within the frequency range of 2110-2170 MHz. With a robust output power of 2 W average and a gain of 31 dB, this amplifier ensures exceptional signal integrity and efficiency. Packaged in a compact TO-272 case, it is ideal for surface mount applications and is capable of withstanding high temperatures up to 225°C, making it a reliable choice for demanding environments.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MW7IC2220NBR1
NXP Semiconductors
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance wireless communication applications, operating within the frequency range of 2110-2170 MHz. With a robust output power of 2 W average and a gain of 31 dB, this amplifier ensures exceptional signal integrity and efficiency. Packaged in a compact TO-272 case, it is ideal for surface mount applications and is capable of withstanding high temperatures up to 225°C, making it a reliable c
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