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MW7IC2220GNR1
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 2 W Avg., 28 V
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 2 W and a gain of 31 dB, this amplifier is ideal for enhancing signal strength in communication systems. Housed in a compact TO-270 package, it supports a supply voltage of 28 V and operates efficiently with a maximum temperature rating of 225°C, making it suitable for demanding environments.
Full Specifications
About This Product
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 2 W and a gain of 31 dB, this amplifier is ideal for enhancing signal strength in communication systems. Housed in a compact TO-270 package, it supports a supply voltage of 28 V and operates efficiently with a maximum temperature rating of 225°C, making it suitable for demanding environments.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MW7IC2220GNR1
NXP Semiconductors
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 2 W and a gain of 31 dB, this amplifier is ideal for enhancing signal strength in communication systems. Housed in a compact TO-270 package, it supports a supply voltage of 28 V and operates efficiently with a maximum temperature rating of 225°C, making it suitable for demanding environments.
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