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MW7IC18100NR1
GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 1990 MHz, 100 W, 28 V
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating at a frequency of 2.05 GHz, this amplifier delivers an impressive output power of 100 W, making it ideal for GSM and EDGE systems. Encased in a compact TO-270 package, it ensures efficient thermal management and reliability, while its surface mount design facilitates easy integration into various electronic system
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About This Product
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating at a frequency of 2.05 GHz, this amplifier delivers an impressive output power of 100 W, making it ideal for GSM and EDGE systems. Encased in a compact TO-270 package, it ensures efficient thermal management and reliability, while its surface mount design facilitates easy integration into various electronic systems. With a gain of 30 dB and a maximum operating temperature of 225°C, this power amplifier is engineered to meet the demanding requirements of modern RF applications.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MW7IC18100NR1
NXP Semiconductors
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating at a frequency of 2.05 GHz, this amplifier delivers an impressive output power of 100 W, making it ideal for GSM and EDGE systems. Encased in a compact TO-270 package, it ensures efficient thermal management and reliability, while its surface mount design facilitates easy integration into various electronic system
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