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MW7IC18100NBR1
GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 1990 MHz, 100 W, 28 V
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating at a frequency of 2.05 GHz, this robust amplifier delivers an impressive output power of 100 W, making it ideal for GSM and EDGE systems. Packaged in a compact TO-272 case, it ensures efficient thermal management and reliable performance even under demanding conditions, with a maximum operating temperature of 225°
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About This Product
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating at a frequency of 2.05 GHz, this robust amplifier delivers an impressive output power of 100 W, making it ideal for GSM and EDGE systems. Packaged in a compact TO-272 case, it ensures efficient thermal management and reliable performance even under demanding conditions, with a maximum operating temperature of 225°C.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MW7IC18100NBR1
NXP Semiconductors
The NXP Semiconductors GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance wireless communication applications. Operating at a frequency of 2.05 GHz, this robust amplifier delivers an impressive output power of 100 W, making it ideal for GSM and EDGE systems. Packaged in a compact TO-272 case, it ensures efficient thermal management and reliable performance even under demanding conditions, with a maximum operating temperature of 225°
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