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MW7IC008NT1
RF LDMOS Wideband Integrated Power Amplifier, 100-1000 MHz, 8 W Peak, 28 V, HQFN24
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance RF applications across a frequency range of 100 to 1000 MHz. With a peak output power of 8 W and a gain of 23.5 dB, this amplifier is ideal for demanding communication systems. Housed in a compact 24-pin QFN package, it operates efficiently at a supply voltage of 28 V, making it suitable for various surface mount applications. Engineered to withstand extreme temperatures f
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About This Product
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance RF applications across a frequency range of 100 to 1000 MHz. With a peak output power of 8 W and a gain of 23.5 dB, this amplifier is ideal for demanding communication systems. Housed in a compact 24-pin QFN package, it operates efficiently at a supply voltage of 28 V, making it suitable for various surface mount applications. Engineered to withstand extreme temperatures from -65°C to 150°C, this amplifier ensures reliable performance in diverse environments.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MW7IC008NT1
NXP Semiconductors
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance RF applications across a frequency range of 100 to 1000 MHz. With a peak output power of 8 W and a gain of 23.5 dB, this amplifier is ideal for demanding communication systems. Housed in a compact 24-pin QFN package, it operates efficiently at a supply voltage of 28 V, making it suitable for various surface mount applications. Engineered to withstand extreme temperatures f
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