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MW6IC2015NBR1
GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifier, 1805-1990 MHz, 15 W, 26 V
The NXP Semiconductors GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifier is a robust and efficient solution designed for high-performance wireless communication applications. Operating within the frequency range of 1805-1990 MHz, this amplifier delivers a powerful output of 15 W while maintaining a gain of 26 dB. Housed in a TO-272 package, it is suitable for surface mount applications and is compliant with RoHS standards, ensuring it meets modern environmental regulations.
Full Specifications
About This Product
The NXP Semiconductors GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifier is a robust and efficient solution designed for high-performance wireless communication applications. Operating within the frequency range of 1805-1990 MHz, this amplifier delivers a powerful output of 15 W while maintaining a gain of 26 dB. Housed in a TO-272 package, it is suitable for surface mount applications and is compliant with RoHS standards, ensuring it meets modern environmental regulations.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
Sourcing Support for This MPN
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RFQ Checklist
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MW6IC2015NBR1
NXP Semiconductors
The NXP Semiconductors GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifier is a robust and efficient solution designed for high-performance wireless communication applications. Operating within the frequency range of 1805-1990 MHz, this amplifier delivers a powerful output of 15 W while maintaining a gain of 26 dB. Housed in a TO-272 package, it is suitable for surface mount applications and is compliant with RoHS standards, ensuring it meets modern environmental regulations.
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