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MW4IC915NBR1
GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifier, 860-960 MHz, 15 W, 26 V
The NXP Semiconductors GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance RF applications operating within the 860-960 MHz frequency range. This robust amplifier delivers an impressive output power of 15 W while maintaining a gain of 30 dB, making it ideal for a variety of wireless communication systems. Packaged in a compact TO-272 case, it ensures efficient thermal management and ease of integration into your designs, all
Full Specifications
About This Product
The NXP Semiconductors GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance RF applications operating within the 860-960 MHz frequency range. This robust amplifier delivers an impressive output power of 15 W while maintaining a gain of 30 dB, making it ideal for a variety of wireless communication systems. Packaged in a compact TO-272 case, it ensures efficient thermal management and ease of integration into your designs, all while adhering to RoHS and lead-free standards.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Case/Package: TO-272
- Number of Pins: 16
- Mount: Screw, Surface Mount
- Frequency: 1GHz
- Gain: 30dB
- Min Supply Voltage: 26V
Typical Use Cases
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MW4IC915NBR1
NXP Semiconductors
The NXP Semiconductors GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifier is a cutting-edge solution designed for high-performance RF applications operating within the 860-960 MHz frequency range. This robust amplifier delivers an impressive output power of 15 W while maintaining a gain of 30 dB, making it ideal for a variety of wireless communication systems. Packaged in a compact TO-272 case, it ensures efficient thermal management and ease of integration into your designs, all
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