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MDE6IC7120GNR1
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 25 W Avg., 28 V
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 728-768 MHz frequency range. With an impressive average output power of 25 W and a gain of 34.4 dB, this amplifier ensures robust signal amplification for various RF communication systems. Packaged in a compact TO-270 case, it features a surface mount design, making it an ideal choice for space-constrained environments. This amplifier is also halogen-free and RoH
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About This Product
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 728-768 MHz frequency range. With an impressive average output power of 25 W and a gain of 34.4 dB, this amplifier ensures robust signal amplification for various RF communication systems. Packaged in a compact TO-270 case, it features a surface mount design, making it an ideal choice for space-constrained environments. This amplifier is also halogen-free and RoHS compliant, ensuring it meets modern environmental standards.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MDE6IC7120GNR1
NXP Semiconductors
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 728-768 MHz frequency range. With an impressive average output power of 25 W and a gain of 34.4 dB, this amplifier ensures robust signal amplification for various RF communication systems. Packaged in a compact TO-270 case, it features a surface mount design, making it an ideal choice for space-constrained environments. This amplifier is also halogen-free and RoH
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