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MD8IC970NR1
RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V, FM16F
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is ideal for a variety of RF applications, providing robust performance in a compact TO-270 surface mount package. With a maximum operating temperature of 150°C and a supply voltage of 32V, this amplifier ensures reliable operation in demanding environments while adhering to RoHS
Full Specifications
About This Product
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is ideal for a variety of RF applications, providing robust performance in a compact TO-270 surface mount package. With a maximum operating temperature of 150°C and a supply voltage of 32V, this amplifier ensures reliable operation in demanding environments while adhering to RoHS compliance standards.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MD8IC970NR1
NXP Semiconductors
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is ideal for a variety of RF applications, providing robust performance in a compact TO-270 surface mount package. With a maximum operating temperature of 150°C and a supply voltage of 32V, this amplifier ensures reliable operation in demanding environments while adhering to RoHS
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