Fast RFQ response for ICs, passive components, protection devices, power semiconductors, and PCBA projects. Upload BOM
Integrated Circuits (ICs)

MD8IC970NR1

RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V, FM16F

The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is ideal for a variety of RF applications, providing robust performance in a compact TO-270 surface mount package. With a maximum operating temperature of 150°C and a supply voltage of 32V, this amplifier ensures reliable operation in demanding environments while adhering to RoHS

BrandNXP Semiconductors
PackageTO-270
Device TypeRF Amplifiers
MountingSurface Mount

Full Specifications

Number of Pins17
Frequency940MHz
Test Frequency940MHz
MountSurface Mount
Weight2.422495g
Bandwidth940MHz
Max Operating Temperature150°C
Min Operating Temperature0°C
Operating Supply Voltage32V
Halogen FreeHalogen Free
Lead FreeLead Free
RoHSCompliant

About This Product

The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is ideal for a variety of RF applications, providing robust performance in a compact TO-270 surface mount package. With a maximum operating temperature of 150°C and a supply voltage of 32V, this amplifier ensures reliable operation in demanding environments while adhering to RoHS compliance standards.

What is this product used for?

Suitable for design, repair, and production programs using RF Amplifiers devices.

Typical Use Cases

RF Semiconductors and Devices RF Amplifiers TO-270 RF Amplifiers

Sourcing Support for This MPN

  • MPN and package verification against your BOM or approved vendor list
  • Approved-alternate and cross-reference review when the requested line is constrained
  • Availability, lifecycle, and supply-risk discussion for procurement planning
  • Packing, label, date-code, and requested document coordination

RFQ Checklist

Part number Confirm the target MPN or suggest approved alternates
Target Quantity Sample, pilot run, or mass production volume
Project stage Prototype, NPI, or ongoing production
Target price Budget or target price range if available
RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V, FM16F

MD8IC970NR1

NXP Semiconductors

The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is ideal for a variety of RF applications, providing robust performance in a compact TO-270 surface mount package. With a maximum operating temperature of 150°C and a supply voltage of 32V, this amplifier ensures reliable operation in demanding environments while adhering to RoHS

  • Competitive pricing from verified sources
  • Sample to production quantities
  • Response within 24 business hours

Send an inquiry for this product