Category reference photo. Confirm the exact package and electrical specifications in the manufacturer resource.
MD8IC970GNR1
RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V, FM16
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is optimized for efficiency and reliability, making it an ideal choice for various RF applications. Housed in a compact TO-270 package, it features a surface mount design that ensures easy integration into your systems. With a robust operating temperature range and compliance wit
Full Specifications
About This Product
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is optimized for efficiency and reliability, making it an ideal choice for various RF applications. Housed in a compact TO-270 package, it features a surface mount design that ensures easy integration into your systems. With a robust operating temperature range and compliance with RoHS standards, this amplifier is perfect for modern electronic designs that prioritize both performance and environmental responsibility.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Case/Package: TO-270
- Number of Pins: 17
- Mount: Surface Mount
- Frequency: 940MHz
- Test Frequency: 940MHz
- Weight: 2.422495g
Typical Use Cases
Sourcing Support for This MPN
Contact JaronSemi to confirm package, date code, and traceability requirements.
- MPN and package verification against your BOM or approved vendor list
- Approved-alternate and cross-reference review when the requested line is constrained
- Availability, lifecycle, and supply-risk discussion for procurement planning
- Packing, label, date-code, and requested document coordination
RFQ Checklist
Continue browsing the catalog












MD8IC970GNR1
NXP Semiconductors
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 850-940 MHz frequency range, delivering an impressive average output power of 35 W. This amplifier is optimized for efficiency and reliability, making it an ideal choice for various RF applications. Housed in a compact TO-270 package, it features a surface mount design that ensures easy integration into your systems. With a robust operating temperature range and compliance wit
- Competitive pricing from verified sources
- Sample to production quantities
- Response within 24 business hours