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Integrated Circuits (ICs)

MD7IC2250NR1

Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V

The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 5.3 W and a gain of 31 dB, this amplifier is ideal for mobile communication systems requiring robust signal amplification. Packaged in a compact TO-270 case, it supports surface mount technology and operates efficiently at a supply voltage of 28 V, making it a reliable choice for modern RF application

BrandNXP Semiconductors
PackageTO-270
Device TypeRF Amplifiers
MountingSurface Mount

Full Specifications

Number of Pins15
Frequency2.17GHz
Gain31dB
Test Frequency2.17GHz
Min Supply Voltage24V
Max Supply Voltage32V
MountSurface Mount
Weight1.651501g
Number of Channels1
Operating Supply Voltage28V
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant

About This Product

The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 5.3 W and a gain of 31 dB, this amplifier is ideal for mobile communication systems requiring robust signal amplification. Packaged in a compact TO-270 case, it supports surface mount technology and operates efficiently at a supply voltage of 28 V, making it a reliable choice for modern RF applications.

What is this product used for?

Suitable for design, repair, and production programs using RF Amplifiers devices.

Typical Use Cases

RF Semiconductors and Devices RF Amplifiers TO-270 RF Amplifiers

Sourcing Support for This MPN

  • MPN and package verification against your BOM or approved vendor list
  • Approved-alternate and cross-reference review when the requested line is constrained
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RFQ Checklist

Part number Confirm the target MPN or suggest approved alternates
Target Quantity Sample, pilot run, or mass production volume
Project stage Prototype, NPI, or ongoing production
Target price Budget or target price range if available
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V

MD7IC2250NR1

NXP Semiconductors

The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 5.3 W and a gain of 31 dB, this amplifier is ideal for mobile communication systems requiring robust signal amplification. Packaged in a compact TO-270 case, it supports surface mount technology and operates efficiently at a supply voltage of 28 V, making it a reliable choice for modern RF application

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