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MD7IC2250NR1
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 5.3 W and a gain of 31 dB, this amplifier is ideal for mobile communication systems requiring robust signal amplification. Packaged in a compact TO-270 case, it supports surface mount technology and operates efficiently at a supply voltage of 28 V, making it a reliable choice for modern RF application
Full Specifications
About This Product
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 5.3 W and a gain of 31 dB, this amplifier is ideal for mobile communication systems requiring robust signal amplification. Packaged in a compact TO-270 case, it supports surface mount technology and operates efficiently at a supply voltage of 28 V, making it a reliable choice for modern RF applications.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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RFQ Checklist
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MD7IC2250NR1
NXP Semiconductors
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range. With an average output power of 5.3 W and a gain of 31 dB, this amplifier is ideal for mobile communication systems requiring robust signal amplification. Packaged in a compact TO-270 case, it supports surface mount technology and operates efficiently at a supply voltage of 28 V, making it a reliable choice for modern RF application
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