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MD7IC2250GNR1
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range, delivering an impressive average output power of 5.3 W. With a gain of 31 dB and optimized for 28 V operation, this amplifier ensures exceptional linearity and efficiency, making it ideal for modern wireless communication systems. Packaged in a TO-270 case and compliant with RoHS standards, this amplifier is a reliable choice for bo
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About This Product
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range, delivering an impressive average output power of 5.3 W. With a gain of 31 dB and optimized for 28 V operation, this amplifier ensures exceptional linearity and efficiency, making it ideal for modern wireless communication systems. Packaged in a TO-270 case and compliant with RoHS standards, this amplifier is a reliable choice for both commercial and industrial RF applications.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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MD7IC2250GNR1
NXP Semiconductors
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 2110-2170 MHz frequency range, delivering an impressive average output power of 5.3 W. With a gain of 31 dB and optimized for 28 V operation, this amplifier ensures exceptional linearity and efficiency, making it ideal for modern wireless communication systems. Packaged in a TO-270 case and compliant with RoHS standards, this amplifier is a reliable choice for bo
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