Category reference photo. Confirm the exact package and electrical specifications in the manufacturer resource.
MD7IC2050NR1
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 1880-2100 MHz frequency range. With an average output power of 10 W and a robust gain of 30.5 dB, this amplifier is ideal for enhancing signal strength in wireless communication systems. Packaged in a compact TO-270 case, it features a dual-channel configuration and operates efficiently at a nominal supply voltage of 28 V, making it a reliable choice for modern R
Full Specifications
About This Product
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 1880-2100 MHz frequency range. With an average output power of 10 W and a robust gain of 30.5 dB, this amplifier is ideal for enhancing signal strength in wireless communication systems. Packaged in a compact TO-270 case, it features a dual-channel configuration and operates efficiently at a nominal supply voltage of 28 V, making it a reliable choice for modern RF applications.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Case/Package: TO-270
- Number of Pins: 15
- Mount: Surface Mount
- Frequency: 2.1GHz
- P1dB: 47.8dBm
- Gain: 30.5dB
Typical Use Cases
Sourcing Support for This MPN
Contact JaronSemi to confirm package, date code, and traceability requirements.
- MPN and package verification against your BOM or approved vendor list
- Approved-alternate and cross-reference review when the requested line is constrained
- Availability, lifecycle, and supply-risk discussion for procurement planning
- Packing, label, date-code, and requested document coordination
RFQ Checklist
Continue browsing the catalog
MD7IC2050NR1
NXP Semiconductors
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 1880-2100 MHz frequency range. With an average output power of 10 W and a robust gain of 30.5 dB, this amplifier is ideal for enhancing signal strength in wireless communication systems. Packaged in a compact TO-270 case, it features a dual-channel configuration and operates efficiently at a nominal supply voltage of 28 V, making it a reliable choice for modern R
- Competitive pricing from verified sources
- Sample to production quantities
- Response within 24 business hours