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MD7IC2050GNR1
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 1880-2100 MHz frequency range, delivering an impressive average output power of 10 W. This amplifier is optimized for W-CDMA standards, making it an ideal choice for modern wireless communication systems. Packaged in a compact TO-270 case, it features a robust gain of 30.5 dB and operates efficiently at a supply voltage of 28 V, ensuring reliable performance in d
Full Specifications
About This Product
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 1880-2100 MHz frequency range, delivering an impressive average output power of 10 W. This amplifier is optimized for W-CDMA standards, making it an ideal choice for modern wireless communication systems. Packaged in a compact TO-270 case, it features a robust gain of 30.5 dB and operates efficiently at a supply voltage of 28 V, ensuring reliable performance in demanding environments.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Case/Package: TO-270
- Number of Pins: 15
- Mount: Surface Mount
- Frequency: 2.05GHz
- P1dB: 47.8dBm
- Gain: 30.5dB
Typical Use Cases
Sourcing Support for This MPN
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RFQ Checklist
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MD7IC2050GNR1
NXP Semiconductors
The NXP Semiconductors Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance applications in the 1880-2100 MHz frequency range, delivering an impressive average output power of 10 W. This amplifier is optimized for W-CDMA standards, making it an ideal choice for modern wireless communication systems. Packaged in a compact TO-270 case, it features a robust gain of 30.5 dB and operates efficiently at a supply voltage of 28 V, ensuring reliable performance in d
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