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M36DR232A120ZA6T
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA66
The STMicroelectronics Memory Circuit combines the efficiency of Flash and SRAM technologies in a compact 66-pin PBGA package. Designed for high-performance applications, this NOR memory solution offers a substantial 4MB capacity with a data bus width of 16 bits. With an access time of just 120ns, it ensures rapid data retrieval, making it ideal for embedded systems that require reliable and fast memory access. Operating within a voltage range of 1.65V to 2.2V, this memory circuit is capable of
Full Specifications
About This Product
The STMicroelectronics Memory Circuit combines the efficiency of Flash and SRAM technologies in a compact 66-pin PBGA package. Designed for high-performance applications, this NOR memory solution offers a substantial 4MB capacity with a data bus width of 16 bits. With an access time of just 120ns, it ensures rapid data retrieval, making it ideal for embedded systems that require reliable and fast memory access. Operating within a voltage range of 1.65V to 2.2V, this memory circuit is capable of functioning in extreme temperatures from -40°C to 85°C, catering to a diverse range of industrial and commercial applications.
What is this product used for?
Suitable for design, repair, and production programs using NOR devices.
Key Features
- Number of Pins: 66
- Interface: Parallel
- Memory Type: NOR Flash
- Access Time: 120ns
- Min Supply Voltage: 1.65V
- Max Supply Voltage: 2.2V
Typical Use Cases
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M36DR232A120ZA6T
STMicroelectronics
The STMicroelectronics Memory Circuit combines the efficiency of Flash and SRAM technologies in a compact 66-pin PBGA package. Designed for high-performance applications, this NOR memory solution offers a substantial 4MB capacity with a data bus width of 16 bits. With an access time of just 120ns, it ensures rapid data retrieval, making it ideal for embedded systems that require reliable and fast memory access. Operating within a voltage range of 1.65V to 2.2V, this memory circuit is capable of
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