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HMC409LP4E
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz | IC AMP WIMAX 3.3GHz-3.8GHz 24SMT
The Analog Devices GaAs InGaP HBT 1 Watt Power Amplifier is a cutting-edge RF amplifier designed for high-performance applications in the 3.3 to 3.8 GHz frequency range. This compact SMD/SMT component delivers exceptional gain and efficiency, making it ideal for WiMAX and other wireless communication systems. With a robust output power of 30.5 dBm and a low noise figure of 6 dB, this amplifier ensures reliable signal amplification while maintaining high fidelity. Engineered for production, it op
Full Specifications
About This Product
The Analog Devices GaAs InGaP HBT 1 Watt Power Amplifier is a cutting-edge RF amplifier designed for high-performance applications in the 3.3 to 3.8 GHz frequency range. This compact SMD/SMT component delivers exceptional gain and efficiency, making it ideal for WiMAX and other wireless communication systems. With a robust output power of 30.5 dBm and a low noise figure of 6 dB, this amplifier ensures reliable signal amplification while maintaining high fidelity. Engineered for production, it operates efficiently within a wide temperature range, making it suitable for various demanding environments.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Case/Package: SMD/SMT
- Number of Pins: 24
- Lifecycle Status: Production
- Frequency: 3.8GHz
- P1dB: 30.5dBm
- Gain: 30dB
Typical Use Cases
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HMC409LP4E
Analog Devices
The Analog Devices GaAs InGaP HBT 1 Watt Power Amplifier is a cutting-edge RF amplifier designed for high-performance applications in the 3.3 to 3.8 GHz frequency range. This compact SMD/SMT component delivers exceptional gain and efficiency, making it ideal for WiMAX and other wireless communication systems. With a robust output power of 30.5 dBm and a low noise figure of 6 dB, this amplifier ensures reliable signal amplification while maintaining high fidelity. Engineered for production, it op
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