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HMC-ALH444-SX
RF Amplifier GaAs HEMT WBand lo Noise amp 1 - 12 GHz
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications ranging from 1 to 12 GHz. With a remarkable gain of 17 dB and a low noise figure of just 1.5 dB, this amplifier ensures optimal signal integrity and performance in demanding RF environments. It operates efficiently at a supply voltage of 5V and is capable of handling temperatures from -55°C to 85°C, making it suitable for a variety of applications in telecommunications, ae
Full Specifications
About This Product
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications ranging from 1 to 12 GHz. With a remarkable gain of 17 dB and a low noise figure of just 1.5 dB, this amplifier ensures optimal signal integrity and performance in demanding RF environments. It operates efficiently at a supply voltage of 5V and is capable of handling temperatures from -55°C to 85°C, making it suitable for a variety of applications in telecommunications, aerospace, and defense. This amplifier is currently in production, ensuring reliability and availability for your design needs.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Number of Pins: 0
- Lifecycle Status: Production
- Frequency: 12GHz
- P1dB: 19dBm
- Gain: 17dB
- Noise Figure: 1.5dB
Typical Use Cases
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HMC-ALH444-SX
Analog Devices
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications ranging from 1 to 12 GHz. With a remarkable gain of 17 dB and a low noise figure of just 1.5 dB, this amplifier ensures optimal signal integrity and performance in demanding RF environments. It operates efficiently at a supply voltage of 5V and is capable of handling temperatures from -55°C to 85°C, making it suitable for a variety of applications in telecommunications, ae
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