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HMC-ALH435
RF Amplifier GaAs HEMT WBand lo Noise amp 5 - 20 GHz
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications ranging from 5 to 20 GHz. This amplifier delivers exceptional performance with a gain of 13 dB and a low noise figure of 2.2 dB, making it ideal for RF communication systems that require high sensitivity and reliability. With a compact design and robust specifications, this amplifier is suitable for various applications in telecommunications, aerospace, and defense sectors
Full Specifications
About This Product
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications ranging from 5 to 20 GHz. This amplifier delivers exceptional performance with a gain of 13 dB and a low noise figure of 2.2 dB, making it ideal for RF communication systems that require high sensitivity and reliability. With a compact design and robust specifications, this amplifier is suitable for various applications in telecommunications, aerospace, and defense sectors.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Number of Pins: 0
- Lifecycle Status: Production
- Frequency: 20GHz
- P1dB: 16dBm
- Gain: 13dB
- Noise Figure: 2.2dB
Typical Use Cases
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HMC-ALH435
Analog Devices
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications ranging from 5 to 20 GHz. This amplifier delivers exceptional performance with a gain of 13 dB and a low noise figure of 2.2 dB, making it ideal for RF communication systems that require high sensitivity and reliability. With a compact design and robust specifications, this amplifier is suitable for various applications in telecommunications, aerospace, and defense sectors
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