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HMC-ALH216
RF Amplifier GaAs HEMT WBand lo Noise amp 14-27 GHz
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications within the 14-27 GHz range. With a gain of 18dB and a noise figure of just 2.7dB at 27GHz, this amplifier ensures optimal signal integrity and performance in demanding RF environments. Its robust design supports a wide operating temperature range from -55°C to 85°C, making it suitable for various applications, including telecommunications and aerospace. Packaged in bulk an
Full Specifications
About This Product
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications within the 14-27 GHz range. With a gain of 18dB and a noise figure of just 2.7dB at 27GHz, this amplifier ensures optimal signal integrity and performance in demanding RF environments. Its robust design supports a wide operating temperature range from -55°C to 85°C, making it suitable for various applications, including telecommunications and aerospace. Packaged in bulk and compliant with RoHS standards, this amplifier is an ideal choice for engineers seeking reliable and efficient RF amplification solutions.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Number of Pins: 0
- Lifecycle Status: Production
- Frequency: 27GHz
- Gain: 18dB
- Noise Figure: 2.7dB
- Test Frequency: 27GHz
Typical Use Cases
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HMC-ALH216
Analog Devices
The Analog Devices RF Amplifier GaAs HEMT is a state-of-the-art low noise amplifier designed for high-frequency applications within the 14-27 GHz range. With a gain of 18dB and a noise figure of just 2.7dB at 27GHz, this amplifier ensures optimal signal integrity and performance in demanding RF environments. Its robust design supports a wide operating temperature range from -55°C to 85°C, making it suitable for various applications, including telecommunications and aerospace. Packaged in bulk an
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