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AFIC901N
RF LDMOS Wideband Integrated Power Amplifier
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is a state-of-the-art solution designed for high-performance RF applications. With a remarkable gain of 32.2dB and a bandwidth of 998.2MHz, this amplifier is optimized for use in demanding environments, delivering exceptional power efficiency and linearity. Its robust design supports a maximum supply voltage of 7.5V and operates reliably across a wide temperature range from -40°C to 150°C, making it suitable for various industri
Full Specifications
About This Product
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is a state-of-the-art solution designed for high-performance RF applications. With a remarkable gain of 32.2dB and a bandwidth of 998.2MHz, this amplifier is optimized for use in demanding environments, delivering exceptional power efficiency and linearity. Its robust design supports a maximum supply voltage of 7.5V and operates reliably across a wide temperature range from -40°C to 150°C, making it suitable for various industrial and commercial applications.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- Gain: 32.2dB
- Max Supply Voltage: 7.5V
- Bandwidth: 998.2MHz
- Max Frequency: 1GHz
- Max Junction Temperature (Tj): 150°C
- Max Operating Temperature: 150°C
Typical Use Cases
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AFIC901N
NXP Semiconductors
The NXP Semiconductors RF LDMOS Wideband Integrated Power Amplifier is a state-of-the-art solution designed for high-performance RF applications. With a remarkable gain of 32.2dB and a bandwidth of 998.2MHz, this amplifier is optimized for use in demanding environments, delivering exceptional power efficiency and linearity. Its robust design supports a maximum supply voltage of 7.5V and operates reliably across a wide temperature range from -40°C to 150°C, making it suitable for various industri
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