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A2I35H060GNR1
Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V, FM17F
The NXP Semiconductors Airfast RF LDMOS Wideband Integrated Power Amplifier, FM17F, is designed for high-performance applications in the 3400-3800 MHz frequency range. With an average output power of 10 W and operating at 28 V, this amplifier delivers exceptional linearity and efficiency, making it ideal for various RF communication systems. Its robust design ensures reliable performance in demanding environments, catering to the needs of modern wireless infrastructure.
Full Specifications
About This Product
The NXP Semiconductors Airfast RF LDMOS Wideband Integrated Power Amplifier, FM17F, is designed for high-performance applications in the 3400-3800 MHz frequency range. With an average output power of 10 W and operating at 28 V, this amplifier delivers exceptional linearity and efficiency, making it ideal for various RF communication systems. Its robust design ensures reliable performance in demanding environments, catering to the needs of modern wireless infrastructure.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Key Features
- RoHS: Non-Compliant
- Configured as rf amplifiers for catalog and RFQ workflows.
- Datasheet reference is available from the product page.
Typical Use Cases
Sourcing Support for This MPN
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RFQ Checklist
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A2I35H060GNR1
NXP Semiconductors
The NXP Semiconductors Airfast RF LDMOS Wideband Integrated Power Amplifier, FM17F, is designed for high-performance applications in the 3400-3800 MHz frequency range. With an average output power of 10 W and operating at 28 V, this amplifier delivers exceptional linearity and efficiency, making it ideal for various RF communication systems. Its robust design ensures reliable performance in demanding environments, catering to the needs of modern wireless infrastructure.
- Competitive pricing from verified sources
- Sample to production quantities
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