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A2I09VD030NR1
Airfast RF LDMOS Wideband Integrated Power Amplifier, 575-960 MHz, 4 W AVG., 48 V, FM15F
The NXP Semiconductors Airfast RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance RF applications, operating efficiently within the frequency range of 575-960 MHz. With an average output power of 4 W and a supply voltage of 48 V, this amplifier is ideal for a variety of communication systems that require reliable and robust signal amplification. Its advanced LDMOS technology ensures superior linearity and efficiency, making it a perfect choice for both commercial and i
Full Specifications
About This Product
The NXP Semiconductors Airfast RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance RF applications, operating efficiently within the frequency range of 575-960 MHz. With an average output power of 4 W and a supply voltage of 48 V, this amplifier is ideal for a variety of communication systems that require reliable and robust signal amplification. Its advanced LDMOS technology ensures superior linearity and efficiency, making it a perfect choice for both commercial and industrial RF applications.
What is this product used for?
Suitable for design, repair, and production programs using RF Amplifiers devices.
Typical Use Cases
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A2I09VD030NR1
NXP Semiconductors
The NXP Semiconductors Airfast RF LDMOS Wideband Integrated Power Amplifier is designed for high-performance RF applications, operating efficiently within the frequency range of 575-960 MHz. With an average output power of 4 W and a supply voltage of 48 V, this amplifier is ideal for a variety of communication systems that require reliable and robust signal amplification. Its advanced LDMOS technology ensures superior linearity and efficiency, making it a perfect choice for both commercial and i
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